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Mobryan
Vertical Cavity Surface Emitting Lasers (VCSELs): Technology Readiness Overview (TRO)
VCSELs
Vertical Cavity Surface Emitting Lasers
VCSELs
Technology Readiness Overview
TRO
2004
2003-12-23T13:13:15Z
Microsoft Word
2011-07-05T10:48:21-04:00
2011-07-05T10:48:21-04:00
Acrobat PDFWriter 4.05 for Windows NT
Vertical Cavity Surface Emitting Lasers, VCSELs, Technology Readiness Overview, TRO, 2004
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-0.001 Tc -0.2105 Tw (VCSELs continue to push back technological barriers) Tj
0 -20.25 TD /F1 10.5 Tf
0.0782 Tc 0.0028 Tw (AXT develops 10 Gbit/s VCSELs) Tj
0 -19.5 TD /F6 10.5 Tf
0.0257 Tc 0.0553 Tw (One area of focus at AXT has been singlemode 850 nm VCSELs, which) Tj
0 -12 TD 0.0939 Tc -0.0129 Tw (resulted in 3.125 Gbit/s devices last year \(see ) Tj
219.75 0 TD /F5 10.5 Tf
0.0414 Tc 0.0396 Tw (Compound Semiconductor) Tj
125.25 0 TD /F6 10.5 Tf
-0.066 Tc 0.147 Tw ( June) Tj
-345 -12 TD 0.0964 Tc -0.0154 Tw (2001, p13\). Other areas of development include all-important steps to) Tj
0 -12 TD 0.0862 Tc -0.0052 Tw (automate packaging processes and to improve optical coupling to the fiber.) Tj
0 -19.5 TD 0.0248 Tc 0.0562 Tw (B Liang described new 10 Gbit/s multimode VCSELs that achieve 3 mW over) Tj
0 -12 TD 0.0596 Tc 0.0214 Tw (the 5-75 \260C range. AXT is currently sampling these devices, which deliver 12.5) Tj
T* 0.0553 Tc 0.0257 Tw (GHz of bandwidth and feature a threshold current of 1.5 mA.) Tj
0 -19.5 TD 0.0685 Tc 0.0125 Tw (Reliability studies show failure rates \(taken at the 0.1% level and using a 10) Tj
0 -12 TD 0.0594 Tc 0.0216 Tw (mA drive current\) that extrapolate to lifetimes of 10) Tj
238.5 5.25 TD /F6 6.75 Tf
-0.003 Tc 0 Tw (5) Tj
3.75 -5.25 TD /F6 10.5 Tf
0.151 Tc -0.07 Tw ( hours at 85 \260C. The) Tj
-242.25 -12 TD 0.0672 Tc 0.0138 Tw (company is also working on large-area \(8 x 8\) arrays and singlemode devices) Tj
0 -12 TD 0.0726 Tc 0.0084 Tw (for encoder and printing applications. Singlemode VCSELs have so far) Tj
T* 0.0631 Tc 0.0179 Tw (achieved 0.5 mW output at 3 mA, and a 0.25 W/A slope efficiency at 25 \260C.) Tj
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0.36 Tc 0 Tw (Figure 3) Tj
-168.75 -13.5 TD /F1 10.5 Tf
0.3228 Tc -0.2418 Tw (Zarlink looks to large apertures) Tj
0 -19.5 TD /F6 10.5 Tf
0.0454 Tc 0.0356 Tw (Zarlink has commercialized 12 x 2.5 Gbit/s arrays and is developing 850 nm) Tj
0 -12 TD 0.0541 Tc 0.0269 Tw (selectively oxidized designs for 10 Gbit/s operation. According to Thomas) Tj
T* 0.0503 Tc 0.0307 Tw (Aggerstam, the modulation characteristics of the company's VCSELs have) Tj
T* 0.0233 Tc 0.0577 Tw (been substantially improved by moving to InGaAs QWs, which exhibit better) Tj
T* 0.0683 Tc 0.0127 Tw (gain characteristics than GaAs QWs.) Tj
0 -19.5 TD 0.0581 Tc 0.0229 Tw (Grown by MOCVD, Zarlink's devices have both contacts on the top of the) Tj
0 -12 TD 0.0957 Tc -0.0147 Tw (structure \(figure 3\), and are grown on semi-insulating GaAs substrates. The) Tj
T* 0.0731 Tc 0.0079 Tw (Bragg mirrors have alternating quarter-wavelength high- and low-index layers) Tj
T* 0.0715 Tc 0.0095 Tw (of AlGaAs. A high aluminum content layer above the active region and top p-) Tj
T* 0.0199 Tc 0.0611 Tw (DBR is oxidized to form the aperture.) Tj
0 -19.5 TD 0.0421 Tc 0.0389 Tw (The active region contains a one wavelength thick AlGaAs/InGaAs MQW, and) Tj
0 -12 TD 0.0638 Tc 0.0172 Tw (the top DBR is implanted to reduce the capacitance of the thin oxide layer. A) Tj
T* 0.0875 Tc -0.0065 Tw (benzocyclobutene insulator is also used to reduce parasitic capacitance from) Tj
T* 0.135 Tc -0.054 Tw (the bond pads.) Tj
0 -19.5 TD 0.0336 Tc 0.0474 Tw (Two apertures sizes were characterized: a 6 \265m device achieved 4 mW and a) Tj
0 -12 TD 0.0091 Tc 0.0719 Tw (bandwidth of 16.5 GHz, while the larger 12 \265m emitter exhibited 18 mW at 13.6) Tj
T* 0.0553 Tc 0.0257 Tw (GHz. Tests over 300 m fiber resulted in power losses of 0.5 dB, although no) Tj
T* 0.0475 Tc 0.0335 Tw (reliability data were available.) Tj
0 -19.5 TD /F1 10.5 Tf
0.233 Tc -0.152 Tw (Reliability issues) Tj
T* /F6 10.5 Tf
0.0575 Tc 0.0235 Tw (T Lowes of Gore Photonics discussed the long-term testing of the VCSELs) Tj
0 -12 TD 0.0449 Tc 0.0361 Tw (used in its commercially available 1.25 Gbit/s nLighten modules. Up to 1500) Tj
T* 0.0795 Tc 0.0015 Tw (devices have been analyzed to date. According to Lowes, current-voltage) Tj
T* 0.1121 Tc -0.0311 Tw (curves stay the same over 9000 hours, although the threshold currents) Tj
T* 0.0427 Tc 0.0383 Tw (increase as the devices age. Gore's VCSELs exhibit lifetimes that exceed the) Tj
T* 0.0539 Tc 0.0271 Tw (requirements of most systems, with eventual failure occurring in the mirror) Tj
T* 0.1127 Tc 0 Tw (regions.) Tj
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0.0878 Tc -0.0068 Tw (arrays at 2.5 and 3.3 Gbit/s. VCSELs capable of 10 Gbit/s performance are) Tj
0 -12 TD 0.0961 Tc -0.0151 Tw (also under development. Their mesa structure reduces series resistance,) Tj
T* 0.0482 Tc 0.0328 Tw (which is currently 60 O. The power output is 1 mW. Initial results of accelerated) Tj
T* 0.0602 Tc 0.0208 Tw (reliability studies \(at 70 \260C and 6 mA\) for 10 Gbit/s 1 x 12 arrays led to lifetimes) Tj
T* -0.0035 Tc 0.0845 Tw (of 4 x 10) Tj
40.5 5.25 TD /F6 6.75 Tf
-0.003 Tc 0 Tw (5) Tj
3.75 -5.25 TD /F6 10.5 Tf
0.1368 Tc -0.0557 Tw ( hours.) Tj
-44.25 -19.5 TD -0.0092 Tc 0.0902 Tw (S Chiou reviewed United Epitaxy Company's \(UEC's\) recent VCSEL activities.) Tj
0 -12 TD 0.0874 Tc -0.0064 Tw (Development began in October 2000, and GaAs-based VCSELs that operate) Tj
T* 0.0843 Tc -0.0033 Tw (in the 780-850 nm range were first announced last June \(see ) Tj
291 0 TD /F5 10.5 Tf
0.0493 Tc 0 Tw (Compound) Tj
-291 -12 TD 0.0366 Tc (Semiconductor) Tj
70.5 0 TD /F6 10.5 Tf
0.0826 Tc -0.0016 Tw ( June 2001, p15\). These devices are available as epiwafers on) Tj
-70.5 -12 TD 0.0812 Tc -0 Tw (3 inch GaAs substrates, or as chips. Red 650 nm devices are also being) Tj
0 -12 TD 0.1134 Tc 0 Tw (developed.) Tj
0 -19.5 TD 0.0541 Tc 0.0269 Tw (UEC now has a third facility at an industry park in Tainan, Taiwan and has a) Tj
0 -12 TD 0.08 Tc 0.001 Tw (total of 30 MOCVD reactors, including five dedicated to nitride-based) Tj
T* 0.0673 Tc 0.0137 Tw (materials. By June this year, the company plans to offer 10 Gbit/s 850 nm) Tj
T* 0.0359 Tc 0.0451 Tw (single VCSELs and 4 x 2.5 Gbit/s arrays.) Tj
0 -19.5 TD 0.0285 Tc 0.0525 Tw (UEC's arrays contain VCSELs with 10 \265m apertures placed at 250 \265m intervals) Tj
0 -12 TD 0.1024 Tc -0.0214 Tw (\(figure 2\). The measured series resistance is 35 O, and the devices deliver 2) Tj
T* 0.0443 Tc 0.0367 Tw (mW of multimode output power at 5 mA for a forward voltage of 1.8 V. To date,) Tj
T* 0.0804 Tc 0 Tw (these devices have operated at 5 mW for 1000 hours at 70 \260C. In contrast with) Tj
T* 0.0091 Tc 0.0719 Tw (the multimode devices, UEC's singlemode 850 nm VCSELs have a relatively) Tj
T* 0.0857 Tc -0.0047 Tw (high series resistance of 75 O and an output of 1.5 mW at 5 mA. The) Tj
T* 0.0826 Tc -0.0016 Tw (threshold current lies at 1.5 mA and the singlemode suppression ratio is 40) Tj
T* -0.0035 Tc 0 Tw (dB.) Tj
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